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Proceedings Paper

Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications
Author(s): Stan W. Thomas; Roger Lee Griffith; Alan T. Teruya
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Paper Abstract

We have identified the Motorola 2N4014 and 2N5551 and the Raytheon R53944 as three transistor types that exhibit avalanche characteristics and have long term collector breakdown voltage stability superior to other transistors tested. Stability on all types has been improved by power burnin. An automatic avalanche transistor burnin tester has been constructed to allow power burnin of up to 1008 transistors at a time. The tester is controlled by an IBM Personal Computer (PC) and can be programmed to acquire data, unattended, at any desired rate or period. Data are collected from each run and stored on a floppy disk in ASCII format. The data analysis software, RS/1 , was used for analysis and display. Data runs were typically 3 to 4 months long, with readings taken weekly. The transistors were biased into the avalanche or Zener region by individual current sources set to about 20% of the self-avalanche current for each type of transistor. Motorola, Zetex and National transistors were operated at 100 microamperes (pA), and the Raytheon units were operated at 20 pA. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.

Paper Details

Date Published: 1 April 1991
PDF: 11 pages
Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.24085
Show Author Affiliations
Stan W. Thomas, Lawrence Livermore National Lab. (United States)
Roger Lee Griffith, Lawrence Livermore National Lab. (United States)
Alan T. Teruya, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1358:
19th Intl Congress on High-Speed Photography and Photonics
Peter W. W. Fuller, Editor(s)

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