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Proceedings Paper

Micromechanics modeling of reorientation process of single-crystal shape memory alloys
Author(s): Qing-Ping Sun; Christian Lexcellent; B. C. Goo
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Paper Abstract

A micromechanics-based modeling and simulation of the reorientation process of single crystal shape memory alloys under externally applied mechanical loading are performed in this paper. The work is based on the recently developed micromechanics constitutive theory of single crystal under thermoelastic martensitic transformations. In the modeling, the crystallographic theory of martensitic transformation is used to obtain the kinematic relations of the deformation process, and the elastic strain energy and total free energy of the constitutive element are derived by using thermodynamics and micromechanics self-consistent approaches. The effect of microstructural state variables of the material such as the volume fraction of each kind of variants, their spatial distribution, shape parameter of martensite variants, etc. on the macroscopic behavior of the material is quantitatively taken into consideration. In this paper three kinds of microstructure rearrangement during reorientation process are simulated: (1) reorientation between two kinds of variants; (2) reorientation among 4 kinds of variants; (3) reorientation among 24 kinds of variants; all under both monotonic and cyclic loading. Modeling predictions of the reorientation process reasonably simulate the microstructure processes happening in real materials.

Paper Details

Date Published: 31 May 1996
PDF: 9 pages
Proc. SPIE 2715, Smart Structures and Materials 1996: Mathematics and Control in Smart Structures, (31 May 1996); doi: 10.1117/12.240822
Show Author Affiliations
Qing-Ping Sun, Tsinghua Univ. and Hong Kong Univ. of Science and Technology (Hong Kong)
Christian Lexcellent, Univ. de Franche-Comte (France)
B. C. Goo, Univ. de Franche-Comte (France)


Published in SPIE Proceedings Vol. 2715:
Smart Structures and Materials 1996: Mathematics and Control in Smart Structures
Vasundara V. Varadan; Jagdish Chandra, Editor(s)

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