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Proceedings Paper

Formation of submicrometer current-blocking layer for high-power GaAs/AlGaAs quantum wire array laser
Author(s): Tae-Geun Kim; Sung Min Hwang; Seong-Il Kim; Chang-Sik Son; Eun Kyu Kim; Suk-Ki Min; Jung-Ho Park; Kyung Hyun Park
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Paper Abstract

Short-period GaAs quantum wire (QWR) array was grown by metalorganic chemical vapor deposition on submicron gratings. And a new lithography technique to fabricate submicron current-blocking layer on the short-period QWR array without any external masks was developed. The methods include the followings. The photoresist was coated on the nonplanar top of the laser diode structure. The photoresist stripes were designed to remain over each QWR with a flood exposure and a develop technique. The GaAs contact layers on the parts of the (111)A and all the (100) top quantum wells were removed by employing the photoresist remaining on the top valley as masks. The submicron current-blocking layer was produced all over the regions except QWR's, by sputtering SiO2 film followed by lift-off and metal evaporation. It must help a majority of current pass into QWR active region.

Paper Details

Date Published: 27 May 1996
PDF: 5 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240497
Show Author Affiliations
Tae-Geun Kim, Korea Univ. (South Korea)
Sung Min Hwang, Korea Institute of Science and Technology (South Korea)
Seong-Il Kim, Korea Institute of Science and Technology (South Korea)
Chang-Sik Son, Korea Institute of Science and Technology (South Korea)
Eun Kyu Kim, Korea Institute of Science and Technology (South Korea)
Suk-Ki Min, Korea Institute of Science and Technology (South Korea)
Jung-Ho Park, Korea Univ. (South Korea)
Kyung Hyun Park, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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