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Proceedings Paper

Characterization techniques for x-ray lithography sources
Author(s): Juan R. Maldonado; Peter M. Celliers
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Paper Abstract

Simple measurements techniques for evaluation of x-ray lithography sources are presented in this paper. Experimental results obtained with this simple method in a point source x-ray system consisting of a Cu target irradiated by a Nd:glass laser agree with complete calculations performed taking into account the spectrum from the x-ray source measured with calibrated crystal and CCD detectors.

Paper Details

Date Published: 27 May 1996
PDF: 9 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240494
Show Author Affiliations
Juan R. Maldonado, IBM Microelectronics Div. (United States)
Peter M. Celliers, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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