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Proceedings Paper

Enhanced defect inspection method for x-ray masks
Author(s): Misao Sekimoto; Ikuo Okada; Yasunao Saitoh; Tadahito Matsuda
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Paper Abstract

We have developed new enhanced inspection techniques for small hole defect and half-tone defect in x-ray masks with the printed wafer inspection method. As the inspection sensitivity depends on the signal quality from the inspection sample as well as the performance of the inspection system, we focused on improving the signal quality from the resist pattern by selecting a better x-ray exposure condition. To inspect small hole defects in x-ray mask, we fabricated dot patterns with high contrast signal by printing with negative resist, and succeeded in detecting them accurately. For half-tone defects in x-ray mask, we induced larger defects than original ones by varying the x-ray exposure dosage from the standard, and succeeded in detecting them accurately. These techniques are being applied to the defect inspection process to make a defect-free x-ray mask.

Paper Details

Date Published: 27 May 1996
PDF: 12 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240488
Show Author Affiliations
Misao Sekimoto, NTT LSI Labs. (Japan)
Ikuo Okada, NTT LSI Labs. (Japan)
Yasunao Saitoh, NTT LSI Labs. (Japan)
Tadahito Matsuda, NTT LSI Labs. (Japan)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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