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Proceedings Paper

Optical system for high-throughput EUV lithography
Author(s): Souichi Katagiri; Masaaki Ito; Hiromasa Yamanashi; Eiichi Seya; Tsuneo Terasawa
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Paper Abstract

The designed optical system, which included an illumination optics and an imaging optics, consists of only one grazing-incidence mirror and a two-aspheric-mirror optics with a synchrotron radiation (SR) as a light-source. The illumination optics provides uniform illumination and high-collection efficiency of radiation from the SR. Since there are only four bounces in this system, including the reflective-mask bounce, this optical system has higher throughput. A throughput of 20-30 wafers/hour is predicted with the designed optics. A one- quarter-size prototype of the designed imaging optics was constructed with the numerical aperture of 0.1 and the magnification of 1/5. The efficiency of 60 percent (obtaining dose per estimated one) was obtained with AZ-PN 100 resist in the experiment. A minimum pattern of 0.12-micrometers lines and spaces was printed on a 0.15-micrometers -thick layer of AZ-PN 100 resist.

Paper Details

Date Published: 27 May 1996
PDF: 12 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240487
Show Author Affiliations
Souichi Katagiri, Hitachi Central Research Lab. (Japan)
Masaaki Ito, Hitachi Ltd. (Japan)
Hiromasa Yamanashi, Hitachi Central Research Lab. (Japan)
Eiichi Seya, Hitachi Central Research Lab. (Japan)
Tsuneo Terasawa, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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