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Proceedings Paper

Experiment and simulation of e-beam direct writing over topography
Author(s): Ulrich A. Jagdhold; Lothar Bauch; Monika Boettcher
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Paper Abstract

Electron beam direct writing is used to structure resist over topographical surfaces of technological layers. By using accelerating voltages of 2.5 kV and 20 kV different shapes of the resist profiles after wet deveopment are found. Applying Monte-Carlo methods to simulate the travelling of electrons in matter and using a cell-removal-algorithm to calculate the following wet development an agreement between experimental and simulated resist profiles is achieved to understand this behavior.

Paper Details

Date Published: 27 May 1996
PDF: 9 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240486
Show Author Affiliations
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Lothar Bauch, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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