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Proceedings Paper

Damage characterization of SiN x-ray mask membrane caused by electron-beam exposure
Author(s): Sang-Soo Choi; Young Jin Jeon; Jong-Soo Kim; Hai Bin Chung; Sang-Yun Lee; Jong-Hyun Lee; Hyung Joun Yoo
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Paper Abstract

The effects of exposure damage with an electron beam of 20 to 50 kV acceleration voltage on silicon nitride film prepared by LPCVD system have been investigated. It is shown that the optical and mechanical properties of this material are modified and may potentially limit the use as a membrane in an x-ray mask structure for the high density memory devices of GDRAM level. Especially, the optical transmission of films exposed by electron beam with the acceleration voltage of 50 kV and the dosage of 900 (mu) C/cm2 degraded about 17 percent in the wavelength range of 633 +/- 10 nm. The differences in mechanical deflection on the membrane area of 800 X 800 micrometers 2 area which was, before and after, exposed by electron beam of acceleration voltage of 20 kV - 50 kV were shown about 500 angstrom to 100 angstrom. It was measured by the (alpha) -step (Tencor 200) with the stylus force of 19.6 dyne. The distortion of SiN X-ray mask membrane with alignment window was investigated by interferometric phase mapping.

Paper Details

Date Published: 27 May 1996
PDF: 11 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240484
Show Author Affiliations
Sang-Soo Choi, Electronics and Telecommunications Research Institute (South Korea)
Young Jin Jeon, Electronics and Telecommunications Research Institute (South Korea)
Jong-Soo Kim, Electronics and Telecommunications Research Institute (South Korea)
Hai Bin Chung, Electronics and Telecommunications Research Institute (South Korea)
Sang-Yun Lee, Kyungpook National Univ. (South Korea)
Jong-Hyun Lee, Electronics and Telecommunications Research Institute (South Korea)
Hyung Joun Yoo, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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