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Proceedings Paper

X-ray exposure in the manufacture of sub-150-nm gate lines
Author(s): Angela C. Lamberti; Paul D. Agnello; Emmanuel F. Crabbe; Ronald DellaGuardia; James M. Oberschmidt; Seshu Subbana; Steve Wu
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Paper Abstract

X-ray exposures performed at IBM's Advanced Lithography Facility (ALF) in Hopewell Junction, New York has led to the ability to routinely print sub 250nm discrete devices in photoresist. When fully processed, the resulting electrical channel length for these devices is below 150nm leading to average switching delays of 35 picoseconds. Sub 150nm devices with resulting electrical channel lengths of 100nm have also been made producing switching delays of 20 picoseconds, which are among the fastest reported in CMOS technology. In addition to the discrete devices, fully functional 0.25um 64Kb SRAMs were fabricated with an approximate 40 percent chip yield on the best wafer. Recent improvements in the overall lithographic process have enabled the gate line to be printed at sub 125nm. The resulting electrical channel is below 100nm. Device performance is expected to be faster at these smaller dimensions. The results obtained are based on several lots of 200mm wafers processed with the use of mix and match (x-ray to optical) steppers. The results can be viewed as current x-ray lithography in ALF.

Paper Details

Date Published: 27 May 1996
PDF: 12 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240475
Show Author Affiliations
Angela C. Lamberti, IBM Thomas J. Research Ctr. (United States)
Paul D. Agnello, IBM Microelectronics Div. (United States)
Emmanuel F. Crabbe, IBM Thomas J. Research Ctr. (United States)
Ronald DellaGuardia, IBM Microelectronics Div. (United States)
James M. Oberschmidt, IBM Microelectronics Div. (United States)
Seshu Subbana, IBM Microelectronics Div. (United States)
Steve Wu, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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