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Proceedings Paper

Fine-pitch control in EB lithography for semiconductor laser grating formation
Author(s): Yoshihiro Hisa; Hiroyuki Minami; Kimitaka Shibata; Akira Takemoto; Kazuhiko Sato; Kouki Nagahama; Mutuyuki Otsubo; Masao Aiga
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Paper Abstract

Grating-pitch accuracy is studied from minimum pitch variation point of view. The pitches of the gratings delineated at the focus range from -50micrometers to +50micrometers and stitching errors between subfields are evaluated using an EB machine which features a long distance between the deflector and the wafer stage. The grating pitch variation is realized by using a deflection amplitude control. It is confirmed that errors of the pitches due to defocus are less than 0.05 nm, and the deviations from nominal setting of the pitch are also less than 0.1 nm when the pitches are varied from -6 percent to +6 percent at 0.1 percent step.

Paper Details

Date Published: 27 May 1996
PDF: 10 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240467
Show Author Affiliations
Yoshihiro Hisa, Mitsubishi Electric Corp. (Japan)
Hiroyuki Minami, Mitsubishi Electric Corp. (Japan)
Kimitaka Shibata, Mitsubishi Electric Corp. (Japan)
Akira Takemoto, Mitsubishi Electric Corp. (Japan)
Kazuhiko Sato, Mitsubishi Electric Corp. (Japan)
Kouki Nagahama, Mitsubishi Electric Corp. (Japan)
Mutuyuki Otsubo, Mitsubishi Electric Corp. (Japan)
Masao Aiga, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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