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Proceedings Paper

Nd:YAG laser-induced damage on ultrathin silicon samples
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Paper Abstract

The single shot laser induced damage onset and morphology of ultrathin silicon wafers is investigated using a Q-switched, single longitudinal and transverse mode Nd:YAG laser operating at 1.06 micrometers . The wafers had a thickness of 2.5 - 33 micrometers with identical front and back surface polish and <100> orientation. Comparisons are made for simultaneous front and back surface damage at the lowest level detectable surface modification. The morphology of laser damage on front and back surface due to the application of multiple shots on one site (N/1) at higher fluence values was also monitored. A scatter probe system consisting of a laser beam analyzer and a CCD array was used. It allowed the in-situ observation of the development of damage on the samples.

Paper Details

Date Published: 27 May 1996
PDF: 5 pages
Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); doi: 10.1117/12.240396
Show Author Affiliations
Wolfgang Riede, DLR (Germany)
Jerome B. Franck, Air Force Office of Scientific Research/Bolling (United States)


Published in SPIE Proceedings Vol. 2714:
27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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