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Proceedings Paper

OH content dependence of ArF excimer-laser-induced absorption in type III fused silica
Author(s): Nobu Kuzuu
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Paper Abstract

OH content dependence of the intensity of ArF-excimer laser induced absorption in fused silica synthesized under reducing condition was investigated. The absorption spectra of each silica has a peak of 220 nm, and the intensity of which increases with decreasing OH content. Above OH content about 1150 ppm, ArF laser induced absorption was not observed. Annealing in He ambient, suppressed the creation of the 220 nm band, and no absorption was observed in the sample containing greater than 800 ppm of OH. The annealing in the H2 ambient was not so effective as in He ambient. These results indicate that the fused silica synthesized under reducing conditions and containing OH more than about 1150 ppm was found to be desirable material for excimer laser optics. The fused silica containing more than 800 ppm of OH annealed in the He ambient can also be used as excimer laser optics.

Paper Details

Date Published: 27 May 1996
PDF: 9 pages
Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); doi: 10.1117/12.240372
Show Author Affiliations
Nobu Kuzuu, Nippon Silica Glass Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2714:
27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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