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Proceedings Paper

Development of critical dimension measurement scanning electron microscope for ULSI (S-8000 series)
Author(s): Makoto Ezumi; Tadashi Otaka; Hiroyoshi Mori; Hideo Todokoro; Yoichi Ose
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Paper Abstract

The semiconductor industry is moving from half-micron to quarter-micron design rules. To support this evolution, Hitachi has developed a new critical dimension measurement scanning electron microscope (CD-SEM), the model S-8800 series, for quality control of quarter- micron process lines. The new CD-SEM provides detailed examination of process conditions with 5 nm resolution and 5 nm repeatability (3 sigma) at accelerating voltage 800 V using secondary electron imaging. In addition, a newly developed load-lock system has a capability of achieving a high sample throughput of 20 wafers/hour (5 point measurements per wafer) under continuous operation. To support user friendliness, the system incorporates a graphical user interface (GUI), an automated pattern recognition system which helps locating measurement points, both manual and semi-automated operation, and user-programmable operating parameters.

Paper Details

Date Published: 21 May 1996
PDF: 9 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240146
Show Author Affiliations
Makoto Ezumi, Hitachi, Ltd. (Japan)
Tadashi Otaka, Hitachi, Ltd. (Japan)
Hiroyoshi Mori, Hitachi, Ltd. (Japan)
Hideo Todokoro, Hitachi, Ltd. (Japan)
Yoichi Ose, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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