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Proceedings Paper

Review and characterization of defects after automatic optical inspection on patterned wafers
Author(s): Pascal Bichebois; Pascal Perret; Herve M. Martin; Alain Brun; Daniel Burlet
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Paper Abstract

In-line inspection and review of defects is required in the semiconductor industry for process control and yield improvement. Automated inspection tools detect defects on patterned wafers and provide inspection files. These files are translated by an interfaced review tool: the defects are then automatically presented to the operator for examination. The success of this procedure depends on the accuracy of the localization of defects. This paper presents several tools that have been used for defect analysis and characterization. The interest of different techniques is highlighted by examples: the identification and interpretation of defects encountered during the process is described. Optical microscopes are the most common review tools and are easy to use. The confocal laser scanning system provides both standard optical images and three-dimensional information. The scanning electron microscope (SEM) offers a better resolution and topographical information. Elemental analysis is available when the SEM is linked with an energy dispersive x-ray system (EDX). The focused ion beam machine makes microsections of buried defects and the atomic force microscope gives real 3-D images with high resolution. The purpose of this work is to prepare and then improve the defect classification.

Paper Details

Date Published: 21 May 1996
PDF: 12 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240142
Show Author Affiliations
Pascal Bichebois, SGS-Thomson (France)
Pascal Perret, France Telecom CNET (France)
Herve M. Martin, France Telecom CNET (France)
Alain Brun, France Telecom CNET (France)
Daniel Burlet, France Telecom CNET (France)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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