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Proceedings Paper

Performance of new overlay measurement mark
Author(s): Sang-Man Bae; Ki-Ho Baik
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Paper Abstract

The lithography technology for sub 0.25 micron requires new technology to cope with the resolution limit and line width variations due to interference effects and reflections over topography as well as precise overlay accuracy. The high density deices such as 256M DRAM and 1G DRAM require still tighter overlay accuracy. At the same time, the number of overlay measurement steps are even more increased. For example, in the case of 256M DRAM, there are more than 30 overlay measurement marks and 20 making steps. In this paper, new overlay measurement marks (NOMM) are suggested, because this will result in improving not only the overlay process and yield, but also the simplicity of the measurement steps. The function of NOMM is very useful in measuring overlap accuracy among the three circuit patterns simultaneously. Finally, the NOMM implements performance in terms of high speed data analysis and economy of space on the scribe lines. In addition, NOMM can achieve superior execution in the overlay process with still higher accuracy by utilizing optimized overlay mark type.

Paper Details

Date Published: 21 May 1996
PDF: 12 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240138
Show Author Affiliations
Sang-Man Bae, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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