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Proceedings Paper

Assessment of resist-specific isofocal behavior in optical lithography at half-micron resolution
Author(s): Graham G. Arthur; Brian Martin
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Paper Abstract

This paper investigates, by computer simulation using Prolith/2 and SOLID, the performance of a number of i-line photoresists at half-micron resolution in terms of focus/exposure (F-E) plots and relates their isofocal behavior to exposure and development characteristics as described by the Dill and Mack simulation parameters. Isofocal behavior is found to be independent of the exposure parameters but greatly affected by the development process and is shown to be a function of the Mack parameter, n, which is related to the resist contrast, (gamma) . In addition, this behavior is also shown to be resolution dependant. The results presented in this paper therefore assist in the choice of resist directly from resist characteristics as defined by the modeling parameters, for any particular application, while retaining the desired isofocal exposure conditions.

Paper Details

Date Published: 21 May 1996
PDF: 9 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240136
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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