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Proceedings Paper

Minimizing optical proximity effect at subhalf-micron resolution by the variation of stepper lens operating conditions at i-line, 248-nm, and 193-nm wavelengths
Author(s): Graham G. Arthur; Brian Martin
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Paper Abstract

The forms of optical proximity effect (OPE) known as dense/isolated offset and line-end shortening are investigated by computer simulation using the programs Prolith/2 and SOLID. It is shown that as the partial coherence and numerical aperture are varied, the printing error due to these OPEs can change from positive, through zero to negative, suggesting that if an appropriate set of operating conditions is selected proximity effect can be reduced and even eliminated thus relaxing one of the many stringent reticle design specifications. This not only enables the user to tailor the operating conditions of the imaging system to his particular requirements, but also highlights a possible requirement for future wafer steppers to be made variable over as wide a range of operating conditions as is practicable.

Paper Details

Date Published: 21 May 1996
PDF: 12 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240130
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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