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Proceedings Paper

Resist metrology for lithography simulation, part 2: development parameter measurements
Author(s): Atsushi Sekiguchi; Chris A. Mack; Youichi Minami; Toshiharu Matsuzawa
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Paper Abstract

Resist simulation technology began with the presentation of Dill's lithography models over 20 years ago, and in the ensuing years has undergone various improvements. Basic parameters in resist modeling include the exposure parameters, bulk development parameters, diffusion length of the photoactive compound (PAC) due to post-exposure baking (PEB), and surface inhibition factors. (The exposure parameters are discussed in detail in 'Resist Metrology for Lithography Simulation, Part 1.') In this report, equipment and data analysis software capable of efficient and accurate determination of development parameters, the diffusion lengths of PAC due to PEB, and surface inhibition factors are discussed. In particular, the construction of equipment for the measurement of development rates is described, and techniques for extraction of development parameters, PAC diffusion lengths, and surface inhibition factors are discussed in detail and examples are given for a high resolution i-line resist.

Paper Details

Date Published: 21 May 1996
PDF: 15 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240120
Show Author Affiliations
Atsushi Sekiguchi, Litho Tech Japan Corp. (Japan)
Chris A. Mack, FINLE Technologies, Inc. (United States)
Youichi Minami, Litho Tech Japan Corp. (Japan)
Toshiharu Matsuzawa, Litho Tech Japan Corp. (Japan)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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