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Proceedings Paper

Critical dimension atomic force microscopy for 0.25-um process development
Author(s): Guy Vachet; Michael Young
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Paper Abstract

Advances in AFM technology both in the area of tip manufacturing and tip-to-sample positioning algorithms have enabled their usage in critical dimensions applications within the fab environment. These advancements are permitting the fab engineers to measure device structures in three dimensions. Critical dimension atomic force microscopy (CD-AFM) of 0.25 um CMOS processes being developed by France Telecom CNET (Centre National d'Etude des Telecommunications) within GRESSI project at Grenoble, are presented and compared with traditional semiconductor metrology methods.

Paper Details

Date Published: 21 May 1996
PDF: 7 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240112
Show Author Affiliations
Guy Vachet, France Telecom-CNET (France)
Michael Young, Veeco/Sloan Technology (United States)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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