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Proceedings Paper

Resist metrology for lithography simulation, part I: exposure parameter measurements
Author(s): Chris A. Mack; Toshiharu Matsuzawa; Atsushi Sekiguchi; Youichi Minami
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Paper Abstract

The experimental measurement of the photoresist ABC modeling parameters is described and three different data analysis techniques are compared. The best technique, the use of full exposure simulation to fit the data, is shown to be more accurate than the conventional data analysis method over a wide variety of typical substrates. In particular, artificial swing curve like behavior is observed on non-ideal substrates using the standard data analysis, but is readily accounted for in the more accurate full simulation method.

Paper Details

Date Published: 21 May 1996
PDF: 15 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240109
Show Author Affiliations
Chris A. Mack, FINLE Technologies, Inc. (United States)
Toshiharu Matsuzawa, Litho Tech Japan Corp. (Japan)
Atsushi Sekiguchi, Litho Tech Japan Corp. (Japan)
Youichi Minami, Litho Tech Japan Corp. (Japan)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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