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Proceedings Paper

Benchmarking multimode CD-SEM metrology to 180 nm
Author(s): Kevin M. Monahan; Farid Askary; Richard C. Elliott; Randy A. Forcier; Rich Quattrini; Brian L. Sheumaker; Jason C. Yee; Herschel M. Marchman; Robert D. Bennett; Steven D. Carlson; Harry Sewell; Diane C. McCafferty; Javed Sumra; Jane Yan
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Paper Abstract

Fully automated, multi-mode CD-SEM metrology, utilizing both backscattered electron (BSE) and secondary electron (SE) detection, has been benchmarked to 180 nm critical dimensions using patterns generated by deep-UV lithography. Comparison of pure BSE with conventional SE SEM data used in a study of across-chip linewidth variation (ACLV) revealed that heterogeneous system matching depends on feature orientation as well as an offset between BSE and SE intensity profiles. The corresponding AFM data show that the BSE measurements are more accurate and less sensitive to feature orientation and sample charging. Using the multi-mode system, we found that SE profiles had a higher signal-to-noise ratio while the BSE profiles gave a better representation of the actual line shape. Static and dynamic measurement precision below 2 nm has been achieved with BSE on etched polysilicon. Move-acquire- measure (MAM) times at this precision were under 10 seconds per site. Models for orientation-independent measurement, generic wafer throughput, and overall equipment effectiveness were used to address the issues of system matching, tool productivity, and factory integration, respectively.

Paper Details

Date Published: 21 May 1996
PDF: 14 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240105
Show Author Affiliations
Kevin M. Monahan, KLA Instruments Corp. (United States)
Farid Askary, KLA Instruments Corp. (United States)
Richard C. Elliott, KLA Instruments Corp. (United States)
Randy A. Forcier, KLA Instruments Corp. (United States)
Rich Quattrini, KLA Instruments Corp. (United States)
Brian L. Sheumaker, KLA Instruments Corp. (United States)
Jason C. Yee, KLA Instruments Corp. (United States)
Herschel M. Marchman, Texas Instruments Inc. (United States)
Robert D. Bennett, Texas Instruments Inc. (United States)
Steven D. Carlson, Texas Instruments Inc. (United States)
Harry Sewell, SVG Lithography Systems, Inc. (United States)
Diane C. McCafferty, SVG Lithography Systems, Inc. (United States)
Javed Sumra, SVG Lithography Systems, Inc. (United States)
Jane Yan, SVG Lithography Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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