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Proceedings Paper

Optical characterization of ITO films used in flat panel displays
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Paper Abstract

A new technique is presented that simultaneously and unambiguously determines thickness, index of refraction, (n), and extinction coefficient, (k), as well as energy bandgap of indium tin oxide (ITO) films deposited on either transparent substrates such as quartz or opaque substrates such as silicon. The quantities n and k are determined as a function of wavelength, (lambda) , covering deep UV through near IR wavelengths (from 190 to 900 nm). These quantities can then be correlated to transparency, conductivity, etchability, patternability and manufacturability of ITO.

Paper Details

Date Published: 21 May 1996
PDF: 7 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240104
Show Author Affiliations
A. Rahim Forouhi, n & k Technology, Inc. (United States)
George G. Li, n & k Technology, Inc. (United States)
Iris Bloomer, n & k Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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