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Proceedings Paper

Real-time overlay modeling in a sub-0.50 um production environment using the IVS-100 optical metrology system
Author(s): Bhanu P. Singh; Robert M. Newcomb
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Paper Abstract

As mainstream semiconductor processes move into sub 0.50 micron geometries, the industry requirement for stricter process control of the photolithography process and equipment becomes increasingly crucial. In order to qualify their lithography steppers during the installation process, most fabrication facilities measure overlay registration targets and then perform extensive analysis to determine the systematic grid and intrafield errors induced by the stepper. As the stepper is released to the production environment, overlay registration is measured in order to monitor the process based on mean and standard deviations instead of grid and intrafield analysis. The limitations induced by the differences between the stepper qualification and process monitoring are investigated. In addition, a real-time solution is presented to minimize these differences and improve upon the process monitoring techniques utilized by leading edge manufacturers. The end result is increased process monitoring fidelity, increased equipment utilization and a move from a static to predictive (continuous) tuning environment for the photolithography steppers.

Paper Details

Date Published: 21 May 1996
PDF: 12 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240100
Show Author Affiliations
Bhanu P. Singh, Motorola (United States)
Robert M. Newcomb, IVS, Inc. (United States)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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