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Proceedings Paper

Compensation of intrafield registration error caused by process properties in optical lithography
Author(s): Tae-Gook Lee; Seung-Chan Moon; Hee-Mok Lee; Jeong Soo Kim; Chul-Seung Lee; H. Y. Kim; Hee Kook Park
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Paper Abstract

This paper describes the intra-field registration error caused by the mix of exposure illumination and isolation process independently. Modified illuminations such as annular, quadrupole, and small sigma aperture for phase shift mask are widely used to extend the feasible limits in the current optical process application. Meanwhile, each of the illumination conditions may cause the deterioration of the intra-field registration since they have different optical properties. Also isolation process in CMOS has been considered as a critical step causing the intra-field registration error induced by the wafer stress from the thermal cycle and the different type of films. The mix of illumination conditions, isolation schemes, the temperature and thickness of field oxidation were split to investigate their effects. And the compensation of intra-field registration error was performed by shot scale value.

Paper Details

Date Published: 21 May 1996
PDF: 14 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240097
Show Author Affiliations
Tae-Gook Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Chan Moon, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Mok Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jeong Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chul-Seung Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
H. Y. Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee Kook Park, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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