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Proceedings Paper

Breakdown in pulsed-power semiconductor switches
Author(s): Rudolf K.F. Germer; Joachim Mohr; Karl H. Schoenbach
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Paper Abstract

A model for the high voltage breakdown of semiconductors is developed which can be applied to new high power switches, which were presented on the 18th ICHSPP, or to well known Zener diodes. Computer calculations show that a breakdown may result in localiced current streams. The distribution of the current is inhomogenious in general. The current distribution may show periodicity in space and in time, similar to sawtOoth oscillations with a constant frequency. This frequency can be varied by external parameters. Or it may be chaotic, then a broad frequency spectrum is produced.

Paper Details

Date Published: 1 April 1991
PDF: 7 pages
Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.23996
Show Author Affiliations
Rudolf K.F. Germer, ITP and FH/DBP/Telekom (Germany)
Joachim Mohr, FH/DBP/Telekom (Germany)
Karl H. Schoenbach, Old Dominion Univ. (United States)


Published in SPIE Proceedings Vol. 1358:
19th Intl Congress on High-Speed Photography and Photonics
Peter W. W. Fuller, Editor(s)

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