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Proceedings Paper

Time-response analysis of GaInAs MSM photodiode structures
Author(s): S. V. Averin; Remy Sachot; J. Hugi; Marc P. de Fays; Marc Ilegems
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Paper Abstract

One of the main challenges in the development of the MSM PD (metal-semiconductor-metal photodiode) structures is to obtain a short impulse response. The time-dependent behavior can be best studied in terms of device simulations. We analyze the performances of GaInAs interdigital MSM PD structures by simulating the electron and hole movement with a two- dimensional self-consistent time-dependent technique. The model provides a clear understanding of high-speed dynamic processes in structures with micron and submicron spacing. Several ways of improving the high-speed impulse response of GaInAs MSM PD are proposed.

Paper Details

Date Published: 6 May 1996
PDF: 9 pages
Proc. SPIE 2799, Atomic and Quantum Optics: High-Precision Measurements, (6 May 1996); doi: 10.1117/12.239863
Show Author Affiliations
S. V. Averin, Institute of Radio Engineering and Electronics (Russia)
Remy Sachot, Swiss Federal Institute of Technology (Switzerland)
J. Hugi, Swiss Federal Institute of Technology (Switzerland)
Marc P. de Fays, Swiss Federal Institute of Technology (Switzerland)
Marc Ilegems, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 2799:
Atomic and Quantum Optics: High-Precision Measurements
Sergei N. Bagayev; Anatoly S. Chirkin, Editor(s)

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