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Proceedings Paper

Electro-optic wafer beam deflector in LiTaO3
Author(s): Jun Li; Hsing-Chine Cheng; Matthew J. Kawas; David N. Lambeth; Tuviah E. Schlesinger; Daniel D. Stancil
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Paper Abstract

A novel electro-optic beam deflector is reported based on ferroelectric domain inversion extending through the thickness of a Z-cut LiTaO3 wafer. The selective domain inversion is achieved by electric-field poling assisted by proton exchange, rather than proton exchange followed by rapid thermal annealing. The deflection sensitivity of the device was measured to be 5.0 mrad/KV. This is 93% of the theoretical value for this geometry, and a significant improvement over the value of 80% of theoretical previously reported for a waveguide deflector.

Paper Details

Date Published: 10 May 1996
PDF: 5 pages
Proc. SPIE 2700, Nonlinear Frequency Generation and Conversion, (10 May 1996); doi: 10.1117/12.239695
Show Author Affiliations
Jun Li, Carnegie Mellon Univ. (United States)
Hsing-Chine Cheng, Carnegie Mellon Univ. (United States)
Matthew J. Kawas, Carnegie Mellon Univ. (United States)
David N. Lambeth, Carnegie Mellon Univ. (United States)
Tuviah E. Schlesinger, Carnegie Mellon Univ. (United States)
Daniel D. Stancil, Carnegie Mellon Univ. (United States)

Published in SPIE Proceedings Vol. 2700:
Nonlinear Frequency Generation and Conversion
Mool C. Gupta; William J. Kozlovsky; David C. MacPherson, Editor(s)

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