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Proceedings Paper

Active mode-locking of external cavity semiconductor laser with 1GHz repetition rate
Author(s): Xianhua Wang; Guofu Chen; De-Sen Liu; Dalun Xu; ShuangChen Ruan
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Paper Abstract

This paper discusses active mode-locking technique of semiconductor lasers at a repetition rate of 1GHz.In this work , we use microstrip line matching circuit which is especially designed to match impedances between an ultrahigh frequency source and a laser diode . The laser diodes used in our experiments have antireflection (AR) coatings on one facet . The /4 SlO AR coatings greatly reduce the etalon effects from the laser diode subcavlty . The reflectivity of one facet of lasers has less than 0.2 % . Operating characteristics of laser diodes are also described in this paper

Paper Details

Date Published: 1 April 1991
PDF: 5 pages
Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.23964
Show Author Affiliations
Xianhua Wang, Xian Institute of Optics and Precision Mechanics (China)
Guofu Chen, Xian Institute of Optics and Precision Mechanics (China)
De-Sen Liu, Xian Institute of Optics and Precision Mechanics (China)
Dalun Xu, Xian Institute of Optics and Precision Mechanics (China)
ShuangChen Ruan, Xian Institute of Optics and Precision Mechanics (China)


Published in SPIE Proceedings Vol. 1358:
19th Intl Congress on High-Speed Photography and Photonics
Peter W. W. Fuller, Editor(s)

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