Share Email Print
cover

Proceedings Paper

Recent progress in AlGaN/GaN laser structures on 6H-SiC
Author(s): Gary E. Bulman; John A. Edmond; Vladimir A. Dmitriev; Hua-Shuang Kong; Michelle T. Leonard; Kenneth G. Irvine; V. I. Nikolaev; A. S. Zubrilov; D. V. Tsvetkov
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Room temperature hole concentrations of 5 multiplied by 1017 cm-3 and mobilities of 8.4 cm2/V-s have been measured on heavily Mg doped GaN layers grown on SiC. Specific contact resistivities of 0.046 (Omega) -cm2 have been obtained from TLM measurements on ohmic contacts to these layers. Double heterostructures (DH) of GaN/AlxGa1-xN with x equals 0.1 have been grown on n-type 6H-SiC substrates. High quality facets have been fabricated by cleaving these DH structures. Photopumped stimulated emission has been observed in undoped structures at 372 nm at a threshold power density of 72 kW/cm2. An optical gain of 1000 cm-1 was measured in the same samples at 200 kW/cm2.

Paper Details

Date Published: 1 May 1996
PDF: 7 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.239007
Show Author Affiliations
Gary E. Bulman, Cree Research, Inc. (United States)
John A. Edmond, Cree Research, Inc. (United States)
Vladimir A. Dmitriev, Cree Research, Inc. (United States)
Hua-Shuang Kong, Cree Research, Inc. (United States)
Michelle T. Leonard, Cree Research, Inc. (United States)
Kenneth G. Irvine, Cree Research, Inc. (United States)
V. I. Nikolaev, A.F. Ioffe Physical-Technical Institute (Russia) and Cree Research EED (Russia)
A. S. Zubrilov, A.F. Ioffe Physical-Technical Institute (Russia) and Cree Research EED (Russia)
D. V. Tsvetkov, A.F. Ioffe Physical-Technical Institute (Russia) and Cree Research EED (Russia)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top