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Proceedings Paper

Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects
Author(s): Irina V. Akimova; Petr Georgievich Eliseev
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Paper Abstract

Spectral study is presented of strained InGaAs/GaAs/AlGaAs quantum-well laser structure (emission peak near 980 nm) in wide temperature and injection current density ranges. Special measures are undertaken to reduce the distortion of the spectral distribution of spontaneous emission by stimulated optical processes. Dynamic degeneration level over 10 kT at low temperature is achieved. The band filling process and spectral broadening are investigated, and characteristics of both processes are determined.

Paper Details

Date Published: 1 May 1996
PDF: 12 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238999
Show Author Affiliations
Irina V. Akimova, P.N. Lebedev Physical Institute (Russia)
Petr Georgievich Eliseev, P.N. Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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