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Proceedings Paper

High-efficiency ZnCdSe/ZnSSe/ZnMgSSe green and blue light-emitting diodes
Author(s): Norikazu Nakayama; Satoshi Itoh; Akira Ishibashi; Yoshifumi Mori
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Paper Abstract

Molecular beam epitaxy (MBE) has been used to grow our II-VI green and blue light-emitting diodes (LEDs) on n-GaAs substrates. The main structure consists of a ZnCdSe/ZnSSe triple quantum-well active region, ZnSSe carrier confining layers, ZnMgSSe cladding layers, and a p-ZnTe/p-ZnSe multiple quantum-well contact region. The LED chips, 0.3 multiplied by 0.3 mm2 in size, were mounted on LED leadframes and were encapsulated in epoxy. The devices produce light output powers of 3.5 mW (513 nm) and 1.5 mW (486 nm) for a direct current (dc) of 20 mA at room temperature. The corresponding external quantum efficiencies are 7.2% for the green, and 2.9% for the blue LEDs. In particular, the blue LED operated at a low applied voltage of 2.63 V for 20 mA. An aging test showed a half-intensity lifetime of 1000 hours for the candela-class blue LED under a constant dc drive current of 10 mA at an ambient temperature of 27 degrees Celsius.

Paper Details

Date Published: 1 May 1996
PDF: 7 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238989
Show Author Affiliations
Norikazu Nakayama, Sony Corp. (Japan)
Satoshi Itoh, Sony Corp. (Japan)
Akira Ishibashi, Sony Corp. (Japan)
Yoshifumi Mori, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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