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Proceedings Paper

Three-terminal laser structures for high-speed modulation using variable carrier heating
Author(s): Valery I. Tolstikhin; Magnus Willander
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Paper Abstract

Concept, basic physics and modeling results of a novel modulation technique, associated with a variable heating of the electron-hole plasma in the active region of a lasing device, are reviewed with respect to the ultimately high-speed performance of semiconductor lasers. It is shown, that independent control of the plasma concentration and temperature provides a way for generating the picosecond gain-switched optical pulses and multi-Gbit/s modulation with, optionally, no parasitic frequency chirp. To practically realize this method, three-terminal laser structures are suggested, in which two bias voltages are intended to drive the pumping rate and the energy, yielded in the active region plasma as a result of injecting a single electron.

Paper Details

Date Published: 1 May 1996
PDF: 11 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238988
Show Author Affiliations
Valery I. Tolstikhin, Institute of Radio Engineering and Electronics (Russia)
Magnus Willander, Linkoeping Univ. (Sweden)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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