Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures | (1996) | Pollak | Publications

Proceedings Paper

Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures

Author(s): Fred H. Pollak; Wojciech Krystek; M. Leibovitch; L. Malikova; Mark S. Hybertsen; R. Lum; J. M. Vandenberg; C. Lewis Reynolds

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Paper Abstract

This paper reviews the use of the contactless electromodulation spectroscopy methods of photoreflectance and contactless electroreflectance for the nondestructive, room temperature investigation of wafer-scale single or multiquantum well laser structures including 0.98 micrometer InGaAs/GaAs/GaAlAs (graded index separate confinement heterostructure), 1.3 micrometer InGaAsP/InP, 0.98 micrometer InGaAs/GaAs/InGaP and 0.65 micrometer InGaP/AlInP/AlGaInP planar as well as InGaAs/GaAs/GaAlAs and GaAs/GaAlAs vertical cavity emitting samples.

Paper Details

Date Published: 1 May 1996
PDF: 12 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238981

Show Author Affiliations

Fred H. Pollak, CUNY/Brooklyn College (United States)
Wojciech Krystek, CUNY/Brooklyn College (United States)
M. Leibovitch, CUNY/Brooklyn College (United States)
L. Malikova, CUNY/Brooklyn College (United States)

Mark S. Hybertsen, AT&T Bell Labs. (United States)
R. Lum, AT&T Bell Labs. (United States)
J. M. Vandenberg, AT&T Bell Labs. (United States)
C. Lewis Reynolds, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)