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Proceedings Paper

Critical issues in laser diode calculations
Author(s): Peter Blood; Paul C. T. Rees; Craig Cooper; Peter M. Smowton
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Paper Abstract

We have examined the critical factors in calculations of optical gain and spontaneous recombination in GaAs, GaInP, and GaN semiconductor quantum well systems, in particular, the behavior of the transparency current and the effects of Coulomb enhancement. We have also compared the optical confinement factors, and the relative importance of spectral broadening by de-phasing of the polarization due to carrier-carrier interactions and by unintentional monolayer well width variations. These effects are quantified for the three material systems. We also present the results of full simulations of the potential distribution through GaInP laser structures and compare these with the common flat-band approach.

Paper Details

Date Published: 1 May 1996
PDF: 11 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238980
Show Author Affiliations
Peter Blood, Univ. of Wales Cardiff (United Kingdom)
Paul C. T. Rees, Trinity College (United States)
Craig Cooper, Univ. of Wales Cardiff (United Kingdom)
Peter M. Smowton, Univ. of Wales Cardiff (United Kingdom)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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