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Proceedings Paper

Electrical characterization of p-type Zn(Se,Te):N semiconductor layers
Author(s): Thomas Marshall; Michael D. Pashley; Albert Sicignano; L. Zhao
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Paper Abstract

We have grown p-type ZnSe1-xTex:N (x equals 0.08 - 1.0) epilayers by molecular beam epitaxy on GaAs substrates, and characterized their electrical behavior. The Te fraction x was determined by energy-dispersive x-ray spectroscopy and by high-resolution x-ray diffraction. The free-hole concentrations and mobilities were determined by Hall-effect measurements, and the contact resistances of evaporated PdAu metal to the epilayers were measured using standard transmission-line techniques. The contact resistance decreases sharply with increasing Te content, falling from 0.6 (Omega) cm2 for a film with 8% Te to 3.5 multiplied by 10-7 (Omega) cm2 for a pure ZnTe film. Under the growth and doping conditions used, the hole mobility shows a minimum of about 1 cm2/Vs at about 25% Te. It is expected that by optimizing these single-layer properties, the building blocks of an improved electrical contact to ZnSe can be obtained.

Paper Details

Date Published: 1 May 1996
PDF: 5 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238979
Show Author Affiliations
Thomas Marshall, Philips North America Corp. (United States)
Michael D. Pashley, Philips North America Corp. (United States)
Albert Sicignano, Philips North America Corp. (United States)
L. Zhao, Philips North America Corp. (United States)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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