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Proceedings Paper

Observation of spectral hole sidebands in the gain region of an inverted semiconductor
Author(s): Georg Mohs; Rolf H. Binder; Brian Fluegel; Harald W. Giessen; Nasser Peyghambarian
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Paper Abstract

We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.

Paper Details

Date Published: 1 May 1996
PDF: 8 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238962
Show Author Affiliations
Georg Mohs, Optical Sciences Ctr./Univ. of Arizona (United States)
Rolf H. Binder, Optical Sciences Ctr./Univ. of Arizona (United States)
Brian Fluegel, Optical Sciences Ctr./Univ. of Arizona (United States)
Harald W. Giessen, Optical Sciences Ctr./Univ. of Arizona (United States)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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