Share Email Print
cover

Proceedings Paper

Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors
Author(s): Harald W. Giessen; Ulrike Woggon; Brian Fluegel; Georg Mohs; Yuan Zheng Hu; Stephan W. Koch; Nasser Peyghambarian
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Paper Details

Date Published: 1 May 1996
PDF: 5 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238959
Show Author Affiliations
Harald W. Giessen, Optical Sciences Ctr./Univ. of Arizona (United States)
Ulrike Woggon, Optical Sciences Ctr./Univ. of Arizona (United States)
Brian Fluegel, Optical Sciences Ctr./Univ. of Arizona (United States)
Georg Mohs, Optical Sciences Ctr./Univ. of Arizona (United States)
Yuan Zheng Hu, Optical Sciences Ctr./Univ. of Arizona (United States)
Stephan W. Koch, Optical Sciences Ctr./Univ. of Arizona (United States)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top