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Proceedings Paper

Excitons, biexcitons, and stimulated emission in wide gap II-VI quantum wells
Author(s): Fritz Henneberger; Joachim Puls; T. Hauepl; Frank Kreller; Martin Lowisch; H. Nickolaus; Alex Schuelzgen; Hans-Juergen Wuensche; J. Griesche; Nir J. Hoffman; Michael Rabe
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Paper Abstract

This paper studies excitons and bi-excitons in ternary (Zn,Cd)Se/ZnSe quantum wells, widely used as active region in blue-green laser diodes. Localization on alloy disorder characteristically influences the electronic structure of these excitations and their dynamical behavior. The low-temperature lasing is controlled by bi-excitons. Gain as large as 2 (DOT) 104 cm-1 and optical threshold densities as low as 2 kW cm-2 are observed. Due to their localization-enhanced binding energy, bi-exciton signatures are present up to 150 K.

Paper Details

Date Published: 1 May 1996
PDF: 11 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238957
Show Author Affiliations
Fritz Henneberger, Humboldt-Univ. zu Berlin (Germany)
Joachim Puls, Humboldt-Univ. zu Berlin (Germany)
T. Hauepl, Humboldt-Univ. zu Berlin (Germany)
Frank Kreller, Humboldt-Univ. zu Berlin (Germany)
Martin Lowisch, Humboldt-Univ. zu Berlin (Germany)
H. Nickolaus, Humboldt-Univ. zu Berlin (Germany)
Alex Schuelzgen, Humboldt-Univ. zu Berlin (Germany)
Hans-Juergen Wuensche, Humboldt-Univ. zu Berlin (Germany)
J. Griesche, Humboldt-Univ. zu Berlin (Germany)
Nir J. Hoffman, Humboldt-Univ. zu Berlin (Germany)
Michael Rabe, Humboldt-Univ. zu Berlin (Germany)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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