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Proceedings Paper

Optical gain in ZnCdSe-ZnSe quantum well structures
Author(s): Paul C. T. Rees; Jon. F. Heffernan; Fred P. Logue; John F. Donegan; Christopher Jordan; John Hegarty; Futoshi Hiei; Akira Ishibashi
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Paper Abstract

We have measured the gain spectrum of an optically pumped 40 angstrom ZnCdSe-ZnSe multiple quantum well. Our calculation, which includes many body effects such as Coulomb enhancement and spectral broadening due to carrier scattering, gives excellent agreement with the experimental gain measurements. We then show the importance of the inclusion of the Coulomb enhancement for the calculation of optical gain when predicting laser threshold currents. This is emphasized by using our gain calculation as a basis to theoretically optimize a simple ZnCdSe-ZnSe quantum well laser structure incorporating the leakage current over the p-type cladding.

Paper Details

Date Published: 1 May 1996
PDF: 7 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238946
Show Author Affiliations
Paul C. T. Rees, Trinity College (Ireland)
Jon. F. Heffernan, Trinity College (Ireland)
Fred P. Logue, Trinity College (Ireland)
John F. Donegan, Trinity College (Ireland)
Christopher Jordan, Trinity College (Ireland)
John Hegarty, Trinity College (Ireland)
Futoshi Hiei, Sony Corp. (Japan)
Akira Ishibashi, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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