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Proceedings Paper

Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers
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Paper Abstract

Calculations are presented aimed at optimizing the design of GaN/AlGaN double- heterostructure diode lasers emitting in the near-UV spectral region. Material parameters of GaN active medium are reviewed and specified for modeling of both edge- and surface- emitting laser devices. Comparison with published experimental results indicates that nonradiative recombination in the active region (most likely occurring at heterojunction interfaces) limits the carrier lifetime to approximately 1 ns. Theoretical minimum threshold current density is shown to depend weakly on the assumed band parameters.

Paper Details

Date Published: 1 May 1996
PDF: 12 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238945
Show Author Affiliations
Marek Osinski, Univ. of New Mexico (United States)
Petr Georgievich Eliseev, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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