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Proceedings Paper

Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure
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Paper Abstract

GaN/In0.05Ga0.95N/Al0.15Ga0.85N double heterostructures doped with Zn and Si, used in Nichia LEDs, are investigated. Electrical, electroluminescent and photoluminescent properties are presented and discussed. Blue photoluminescence (PL) is analyzed to obtain optical transition parameters (phonon coupling strength and zero-phonon line position) involved in formation of the impurity-related emission band. With a minor modification of parameters for Zn centers in GaN, a satisfactory fit is achieved for PL spectra.

Paper Details

Date Published: 1 May 1996
PDF: 12 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238944
Show Author Affiliations
Petr Georgievich Eliseev, Univ. of New Mexico (United States)
Vladimir A. Smagley, Univ. of New Mexico (United States)
Piotr Perlin, Univ. of New Mexico (United States)
Philippe Sartori, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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