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Proceedings Paper

Advantages of Al-free InGaAsP/GaAs lasers for WDM applications
Author(s): Hyuk Jong Yi; Manijeh Razeghi
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Paper Abstract

We examine several critical issues related to laser diodes with wavelength (lambda) approximately 750 - 1000 micrometers for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.

Paper Details

Date Published: 1 May 1996
PDF: 11 pages
Proc. SPIE 2690, Wavelength Division Multiplexing Components, (1 May 1996); doi: 10.1117/12.238931
Show Author Affiliations
Hyuk Jong Yi, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2690:
Wavelength Division Multiplexing Components
Louis S. Lome, Editor(s)

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