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Proceedings Paper

Bandfilling and bandgap shrinkage in the femtosecond spectroscopyof GaAs
Author(s): Weizhu Lin; Fei-Peng Pi; Zhong Chen; Yuchuang Chen; Xiangyang Zheng; Tianshu Lai; Dang Mo
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Paper Abstract

The effects of bandfilling and bandgap shrinkage in the femtosecond absorption saturation measurements of GaAs have been studied using femtosecond pulses generated from CPM dye laser and self-mode-locked Ti:sapphire laser. For exciting photon energy of 2 eV and carriers density of 1 by 1018 cm-3, an optical induced absorption increase is observed and is attributed to the bandgap shrinkage. The dependence of the change of absorption coefficient on photon energy, temperature and excited carrier densities is discussed.

Paper Details

Date Published: 19 April 1996
PDF: 4 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238405
Show Author Affiliations
Weizhu Lin, Zhongshan Univ. (China)
Fei-Peng Pi, Guangzhou Teachers' College (China)
Zhong Chen, Zhongshan Univ. (China)
Yuchuang Chen, Zhongshan Univ. (China)
Xiangyang Zheng, Zhongshan Univ. (China)
Tianshu Lai, Zhongshan Univ. (China)
Dang Mo, Zhongshan Univ. (China)

Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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