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Proceedings Paper

Infrared photodetectors based on n-i-p-i InAs structures grown by MOCVD
Author(s): Grachik H. Avetisyan; Vladimir B. Kulikov; Igor Dmitrievich Zalevsky; Peter V. Bulaev
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Paper Abstract

In this paper the epitaxial growth of n-i-p-i-InAs structures for infrared photodetectors with sensitivity in region (3-5) mkm grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been represented. Experimental results: spectra absorption, responsivity of these photodetectors were demonstrated. The extension of photosensitivity and absorption spectra in long wave region up to 4 mkm have been found in comparing with common photodetectors based on bulk InAs. It was shown experimentally that n-i-p-i InAs structures are very attractive for manufacturing of high performance photodetectors in ave region (3-5) mkm on its base.

Paper Details

Date Published: 19 April 1996
PDF: 6 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238399
Show Author Affiliations
Grachik H. Avetisyan, Pulsar Science Research Institute (Russia)
Vladimir B. Kulikov, Pulsar Science Research Institute (Russia)
Igor Dmitrievich Zalevsky, Sigma Plus Co. (Russia)
Peter V. Bulaev, Sigma Plus Co. (Russia)

Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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