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Proceedings Paper

Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes
Author(s): Theodore S. Moise; Yung Chung Kao; Francis G. Celii
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Paper Abstract

Through the use of a vertically-integrated resonant tunneling diode heterostructure, we have examined the impact of lattice-mismatch on the electrical properties of the AlAs/In0.53Ga0.47As/InAs resonant tunneling diode (RTD). For strained-layers below the critical thickness, the current-voltage characteristics of the RTD track the bandgap change. In contrast, for strained layers greater than the critical thickness, the current-voltage characteristics are significantly degraded in the case of three-dimensional relaxation, but retain their characteristics in the case of two-dimensional relaxation.

Paper Details

Date Published: 19 April 1996
PDF: 11 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238393
Show Author Affiliations
Theodore S. Moise, Texas Instruments Inc. (United States)
Yung Chung Kao, Texas Instruments Inc. (United States)
Francis G. Celii, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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