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Proceedings Paper

Photocurrent anomaly in double-barrier quantum well structures
Author(s): Stefan Ehret; Harald Schneider; Eric C. Larkins
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Paper Abstract

We investigated the intersubband photocurrent as a function of the bias voltage and the incident wavelength in n-type photovoltaic GaAs/AlAs/Al0.3Ga0.7As double-barrier quantum well (DBQW) infrared detectors. The significant photovoltaic behavior of the detectors arises from a segregation of the dopant during the growth process. For an externally applied bias voltage, which compensates the internal space-charge field, the photocurrent exhibits a multiple sign change for varying incident wavelengths. This observation can be understood in the context of resonant coupling between the excited state in the GaAs quantum well and states, which are confined in the Al0.3Ga0.7As-region. This coupling leads to an enhancement of the tunneling rates through the AlGaAs barriers and to a partial localization of the above barrier states in the GaAs region.

Paper Details

Date Published: 19 April 1996
PDF: 9 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238391
Show Author Affiliations
Stefan Ehret, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Harald Schneider, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Eric C. Larkins, Univ. of Nottingham (United Kingdom)


Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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