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Proceedings Paper

Resonant tunneling devices and circuits
Author(s): Jun Shen; Saied N. Tehrani; Herb Goronkin; Gary Kramer
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Paper Abstract

We review results of logic and memory devices and circuits based on the negative differential resistance associated with resonant tunneling and interband tunneling effects. We have fabricated resonant interband tunneling field effect transistors on both InAs/GaSb/AlSb and InGaAs/InAlAs/InP material systems. A new exclusive-NOR device has also been demonstrated. Preliminary results of a FULL ADDER are shown. Static random access memory based on the bistability of two serially connected diodes is also achieved. We show simulations and compare our devices with other approaches and discuss important issues related to applications of resonant tunneling devices and circuits.

Paper Details

Date Published: 19 April 1996
PDF: 10 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238388
Show Author Affiliations
Jun Shen, Motorola (United States)
Saied N. Tehrani, Motorola (United States)
Herb Goronkin, Motorola (United States)
Gary Kramer, Motorola (United States)


Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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