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Proceedings Paper

Waveguide effect in quantum well infrared photodetectors
Author(s): Grachik H. Avetisyan; Vladimir B. Kulikov; Igor Dmitrievich Zalevsky; Vladimir V. Kovalevsky; A. F. Plotnikov
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Paper Abstract

The possibility of quantum efficiency enhancement in GaAs/AlGaAs quantum well infrared photodetectors (QWIP) by means of waveguide propagation of radiation in superlattice is investigated in this paper. Epitaxial structures for photodetector manufacturing were grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) on high doped (3 (DOT) 1018 cm-3) n-type substrates. The use of these high doped conductive substrates allows us to achieve an abrupt change of refractive index on interface between superlattice and substrate. Due to this fact optical restriction of electromagnetic wave propagation along superlattice arises. A fine structure with peaks ((Delta) (lambda) equals 0.1 mkm) was found on the photosensitivity spectra of this QWIP ((lambda) max equals 9 mkm). We consider this effect can be explained by arising of standing waves in volume of QWIP. It indicates one possibility of waveguide propagation of radiation in QWIP structures grown on high doped conductive substrates. The use of QWIP on conductive substrates allows us to increase a quantum efficiency and to simplify the technology QWIP-lines manufacturing.

Paper Details

Date Published: 19 April 1996
PDF: 7 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238387
Show Author Affiliations
Grachik H. Avetisyan, Pulsar Scientific Research Institute (Russia)
Vladimir B. Kulikov, Pulsar Scientific Research Institute (Russia)
Igor Dmitrievich Zalevsky, Sigma Plus Co. (Russia)
Vladimir V. Kovalevsky, P.N. Lebedev Physical Institute (Russia)
A. F. Plotnikov, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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