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Proceedings Paper

Strain-engineered semiconductor heterostructures for novel optoelectronic devices
Author(s): Hongen Shen
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Paper Abstract

In this paper we show that strain is a useful effect and in addition to improving the performance of existing devices it may be used with greater functionality to demonstrate novel optoelectronic devices. We give as examples two such devices that we have conceived and demonstrated, one each in the two respective areas of strain, lattice-mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

Paper Details

Date Published: 19 April 1996
PDF: 9 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238383
Show Author Affiliations
Hongen Shen, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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