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Proceedings Paper

GaInSb/InAs superlattice-based infrared lasers
Author(s): Richard H. Miles; Tom C. Hasenberg; Alan R. Kost; L. West
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Paper Abstract

Mid-wave infrared lasers have been fabricated employing InAs/A1Sb superlattice cladding layers and multi-quantum well active regions consisting of Ga75In025Sb1InAs broken-gap superlattice wells and Ga75In025As023Sb,,77 barriers. Diodes demonstrated to date include lasers with emission wavelengths of 3.18j.tm at 255K, 3.40im at 195K, and 4.32p.m at 110K. Keywords: infrared, laser, diode, superlattice, multi-quantum well

Paper Details

Date Published: 19 April 1996
PDF: 6 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238382
Show Author Affiliations
Richard H. Miles, Hughes Research Labs. (United States)
Tom C. Hasenberg, Hughes Research Labs. (United States)
Alan R. Kost, Hughes Research Labs. (United States)
L. West, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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